FF150R12ME3G
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Specification
Product | IGBT Silicon Modules |
Configuration | Dual |
Collector - Emitter maximum voltage VCEO | 1200 V |
Collector - emitter saturation voltage | 1.7 V |
Continuous collector current at 25 ° C | 200 A |
Gate-emitter leakage current | 400 nA |
Pd - Power Dissipation | 695 W |
Package / case | EconoDUAL-3 |
The maximum working temperature | + 125 C |
Height | 17 mm |
Length | 152 mm |
Gate / emitter maximum voltage | +/- 20 V |
Minimum working temperature | - 40 C |
Installation style | Screw |
Factory packing quantity | 10 |
Width | 62 mm |
Unit weight | 345 g |
Others include "FF150R12ME3G" parts
The following parts include 'FF150R12ME3G'
- ff225r17me4_b1
- ff225r12me4_b1
- ffa.0s.304.clac32
- ffa.0s.302.clal4
- ffa.0s.250.ctac4
- ffa.0s.303.clac3
- ffa.1s.302.clac52
- ffg.1b.302.clad5
- ffa.0s.250.ctac2
- ffb0912vh-f0
- ffb0424vhn-f0
- ffa.0s.304.clak5
- ffa.2s.302.clac6
- ffa.2e.302.clac45
- ffa.1e.302.clac5
- ffa.1s.303.clac6
- ffa.0s.304.clac44
- ffa.0s.302.clak5
- ffa.0s.302.clac4
- ffa.0s.302.clak6
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