AFT18HW355SR5
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Specification
RoHS | yes |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 65 V |
Technology | Si |
Gain | 15.2 dB |
Output Power | 63 W |
The maximum working temperature | + 225 C |
Installation style | SMD/SMT |
Package / case | NI-1230S-4 |
Channel mode | Enhancement |
Configuration | Single |
Minimum working temperature | - 40 C |
working frequency | 1.8 GHz |
Series | AFT18HW355S |
Factory packing quantity | 50 |
Types | RF Power MOSFET |
Vgs - gate-source voltage | 10 V |
Vgs th - gate-source threshold voltage | 2.1 V |
Unit weight | 8.440 g |
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