NSVMMBT5401LT3G
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | SOT-23-3 |
Transistor polarity | PNP |
Configuration | Single |
Collector - Emitter maximum voltage VCEO | - 150 V |
Collector-base voltage VCBO | - 160 V |
Emitter-base voltage VEBO | - 5 V |
Collector - emitter saturation voltage | - 0.5 V |
Gain Bandwidth Product fT | 300 MHz |
The maximum working temperature | + 150 C |
Series | MMBT5401L |
Continuous collector current | - 500 mA |
DC collector / Base Gain hfe Min | 60 |
DC current gain hFE maximum | 240 |
Minimum working temperature | - 55 C |
Pd - Power Dissipation | 225 mW |
Factory packing quantity | 10000 |
Unit weight | 8 mg |
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