OPB861N55
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Specification
RoHS | yes |
Slot width | 3.18 mm |
Aperture width | 1.27 mm |
Collector - Emitter maximum voltage VCEO | 30 V |
If - Forward current | 20 mA |
Installation style | PCB |
The maximum working temperature | + 85 C |
Minimum working temperature | - 40 C |
Height | 10.8 mm |
Length | 12.32 mm |
Number of channels | 1 Channel |
Output type | Phototransistor |
Pd - Power Dissipation | 100 mW |
Sensing distance | 3.18 mm |
Sensing method | Transmissive, Slotted |
Factory packing quantity | 100 |
Vr - reverse voltage | 2 V |
Wavelength | 880 nm |
Width | 6.35 mm |
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