2SK3756(TE12L,F)
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Specification
RoHS | yes |
Transistor polarity | N-Channel |
Id - continuous drain current | 1 A |
Vds - Drain-Source Breakdown Voltage | 7.5 V |
Technology | Si |
Gain | 12 dB |
Installation style | SMD/SMT |
Package / case | PW-Mini-3 |
Configuration | Single |
working frequency | 470 MHz |
Pd - Power Dissipation | 3 W |
Series | 2SK3756 |
Factory packing quantity | 1000 |
Types | RF Power MOSFET |
Vgs - gate-source voltage | 3 V |
Vgs th - gate-source threshold voltage | 0.95 V |
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