3SK291(TE85L,F)
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Specification
RoHS | yes |
Transistor polarity | N-Channel |
Id - continuous drain current | 30 mA |
Vds - Drain-Source Breakdown Voltage | 12.5 V |
Technology | Si |
Gain | 22.5 dB |
Installation style | SMD/SMT |
Package / case | SOT-24-4 |
Configuration | Dual |
working frequency | 800 MHz |
Pd - Power Dissipation | 150 mW |
Series | 3SK291 |
Factory packing quantity | 3000 |
Types | RF Small Signal MOSFET |
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