C3M0350120D
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Specification
工作温度范围 | - 55 C~+ 150 C |
Vds-漏源极击穿电压 | 1200 V |
Rds On-漏源导通电阻 | 455 mOhms |
安装方式 | Through Hole |
Pd-功率耗散 | 50 W |
电路数量 | 1 Channel |
晶体管极性 | MOSFET |
Id-连续漏极电流 | 7.6 A |
Vgs - 栅极-源极电压 | - 8 V, 19 V |
封装 | TO-247-3 |
Qg-栅极电荷 | 19 nC |
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