AUIRF7343QTR
In stock
- AUIRF7343QTR Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | SO-8 |
Number of channels | 2 Channel |
Transistor polarity | N-Channel, P-Channel |
Vds - Drain-Source Breakdown Voltage | 55 V |
Id - continuous drain current | 4.7 A |
Rds On - Drain-Source On-Resistance | 65 mOhms |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 24 nC |
Configuration | Single |
Height | 1.75 mm |
Length | 4.9 mm |
Pd - Power Dissipation | 2 W |
Factory packing quantity | 4000 |
Transistor type | 1 N-Channel, 1 P-Channel |
Width | 3.9 mm |
Unit weight | 540 mg |
Others include "AUIRF7343QTR" parts
The following parts include 'AUIRF7343QTR'
AUIRF7343QTR Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
AUIRF7343QTR
Infineon
MOSFET AUTO 55V 1 N-CH HEXFET 3.8mOhms
Learn More >
-
-
-
AUIRF7343QTR
Infineon
Trans MOSFET N/P-CH Si 55V 4.7A/3.4A 8-Pin SOIC T/R Automotive AEC-Q101
Learn More >
-
-
-
AUIRF7343QTR
Infineon
Mosfet Array N and P-Channel 55V 4.7A, 3.4A 2W Surface Mount 8-SO
Learn More >
-
- View All Newest Products from Omron