AUIRF7675M2TR
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | DirectFET-M2 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 150 V |
Id - continuous drain current | 18 A |
Rds On - Drain-Source On-Resistance | 47 mOhms |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 21 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 175 C |
Configuration | Single Quad Drain Dual Source |
Channel mode | Enhancement |
Fall time | 7.5 ns |
Height | 0.74 mm |
Length | 6.35 mm |
Pd - Power Dissipation | 45 W |
Rise Time | 13 ns |
Transistor type | 1 N-Channel |
Typical shutdown delay time | 14 ns |
Typical turn-on delay time | 10 ns |
Width | 3.95 mm |
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