AUIRF7732S2TR
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | DirectFET-SC |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 40 V |
Id - continuous drain current | 58 A |
Rds On - Drain-Source On-Resistance | 6.6 mOhms |
Vgs th - gate-source threshold voltage | 2.5 V |
Vgs - gate-source voltage | 16 V |
Qg - gate charge | 22 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 175 C |
Configuration | Single Quint Source |
Fall time | 37 ns |
Forward transconductance - minimum | 64 S |
Height | 0.74 mm |
Length | 4.85 mm |
Pd - Power Dissipation | 41 W |
Rise Time | 123 ns |
Factory packing quantity | 4800 |
Transistor type | 1 N-Channel |
Width | 3.95 mm |
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