AUIRF7737L2TR
Manufacturer:
Mfr. Part #:
AUIRF7737L2TR
Allchips #:
R001-AUIRF7737L2TR-1-H-0000-X-N
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | DirectFET-L6 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 40 V |
Id - continuous drain current | 156 A |
Rds On - Drain-Source On-Resistance | 7.9 mOhms |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 89 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 175 C |
Configuration | Single Hex Drain Hex Source |
Channel mode | Enhancement |
Fall time | 14 ns |
Height | 0.74 mm |
Length | 9.15 mm |
Pd - Power Dissipation | 83 W |
Rise Time | 19 ns |
Factory packing quantity | 4000 |
Transistor type | 1 N-Channel |
Typical shutdown delay time | 22 ns |
Typical turn-on delay time | 12 ns |
Width | 7.1 mm |
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