AUIRF7759L2TR
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | DirectFET-L8 |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 75 V |
Id - continuous drain current | 160 A |
Rds On - Drain-Source On-Resistance | 1.8 mOhms |
The maximum working temperature | + 175 C |
Height | 0.74 mm |
Length | 9.15 mm |
Pd - Power Dissipation | 125 W |
Factory packing quantity | 4000 |
Width | 7.1 mm |
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