BC 857B E6433
Manufacturer:
Mfr. Part #:
BC 857B E6433
Allchips #:
R001-BC 857B E6433-1-H-0000-X-Y
Description:
双极晶体管 - 双极结型晶体管(BJT) PNP Silicon AF TRANSISTOR
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Specification
RoHS | yes |
Installation style | SMD/SMT |
Package / case | SOT-23-3 |
Transistor polarity | PNP |
Configuration | Dual |
Collector - Emitter maximum voltage VCEO | 45 V |
Collector-base voltage VCBO | 50 V |
Emitter-base voltage VEBO | 5 V |
Collector - emitter saturation voltage | 250 mV |
Maximum DC collector current | 200 mA |
Gain Bandwidth Product fT | 250 MHz |
The maximum working temperature | + 150 C |
Series | BC857 |
Continuous collector current | 100 mA |
DC collector / Base Gain hfe Min | 200 |
DC current gain hFE maximum | 450 |
Height | 1 mm |
Length | 2.9 mm |
Minimum working temperature | - 65 C |
Pd - Power Dissipation | 330 mW |
Factory packing quantity | 10000 |
Width | 1.3 mm |
Unit weight | 8 mg |
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