BC847PNH6327XTSA1
Manufacturer:
Mfr. Part #:
BC847PNH6327XTSA1
Allchips #:
R001-BC847PNH6327XTSA1-1-H-0000-X-Y
Description:
双极晶体管 - 双极结型晶体管(BJT) AF TRANSISTOR
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Specification
RoHS | yes |
Installation style | SMD/SMT |
Package / case | SOT-363-6 |
Transistor polarity | NPN, PNP |
Configuration | Dual |
Collector - Emitter maximum voltage VCEO | 45 V |
Collector-base voltage VCBO | 50 V |
Emitter-base voltage VEBO | 6 V |
Collector - emitter saturation voltage | 200 mV |
Maximum DC collector current | 200 mA |
Gain Bandwidth Product fT | 250 MHz |
The maximum working temperature | + 150 C |
Series | BC847 |
Continuous collector current | 100 mA |
DC collector / Base Gain hfe Min | 200 |
DC current gain hFE maximum | 450 |
Height | 0.9 mm |
Length | 2 mm |
Minimum working temperature | - 60 C |
Pd - Power Dissipation | 250 mW |
Factory packing quantity | 3000 |
Width | 1.25 mm |
Unit weight | 7.500 mg |
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