BCW68HE6327HTSA1
In stock
- BCW68HE6327HTSA1 Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
RoHS | yes |
Installation style | SMD/SMT |
Package / case | SOT-23-3 |
Transistor polarity | PNP |
Configuration | Single |
Collector - Emitter maximum voltage VCEO | 45 V |
Collector-base voltage VCBO | 60 V |
Emitter-base voltage VEBO | 5 V |
Collector - emitter saturation voltage | 0.7 V |
Maximum DC collector current | 1 A |
Gain Bandwidth Product fT | 250 MHz |
The maximum working temperature | + 150 C |
Series | BCW68 |
Continuous collector current | 800 mA |
DC collector / Base Gain hfe Min | 250 |
DC current gain hFE maximum | 630 |
Height | 1.6 mm |
Length | 6.5 mm |
Minimum working temperature | - 65 C |
Pd - Power Dissipation | 330 mW |
Factory packing quantity | 3000 |
Width | 3.5 mm |
Unit weight | 8 mg |
BCW68HE6327HTSA1 Documents
Download datasheets and manufacturer documentation for BCW68HE6327HTSA1
Datasheets
Others include "BCW68HE6327HTSA1" parts
The following parts include 'BCW68HE6327HTSA1'
BCW68HE6327HTSA1 Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
BCW68HE6327HTSA1
Infineon
晶体管 - 双极 (BJT) - 单 PNP 45V 800mA 200MHz 330mW 表面贴装型 SOT-23-3
Learn More >
-
-
-
BCW68HE6327HTSA1
Infineon
晶体管 - 双极 (BJT) - 单 PNP 45V 800mA 200MHz 330mW 表面贴装型 SOT-23-3
Learn More >
-
-
-
BCW68HE6327HTSA1
Infineon
晶体管 - 双极 (BJT) - 单 PNP 45V 800mA 200MHz 330mW 表面贴装型 SOT-23-3
Learn More >
-
-
-
BCW68HE6327HTSA1
Infineon
Trans GP BJT PNP 45V 0.8A 330mW Automotive AEC-Q101 3-Pin SOT-23 T/R
Learn More >
-
- View All Newest Products from Omron