BFP 181 E7764
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Specification
Product Category | 射频(RF)双极晶体管 |
Manufacturer | Infineon |
RoHS | yes |
Transistor type | Bipolar |
Technology | Si |
Transistor polarity | NPN |
Collector - Emitter maximum voltage VCEO | 12 V |
Emitter-base voltage VEBO | 2 V |
Continuous collector current | 0.02 A |
The maximum working temperature | + 150 C |
Configuration | Single Dual Emitter |
Installation style | SMD/SMT |
Package / case | SOT-143-4 |
Trademark | Infineon Technologies |
Collector-base voltage VCBO | 20 V |
DC current gain hFE maximum | 70 at 5 mA at 8 V |
Gain Bandwidth Product fT | 8000 MHz |
Height | 1 mm |
Length | 2.9 mm |
Maximum DC collector current | 0.02 A |
Minimum working temperature | - 65 C |
working frequency | 8 GHz |
Pd - Power Dissipation | 175 mW |
Series | BFP181 |
Factory packing quantity | 3000 |
Types | RF Bipolar Small Signal |
Width | 1.3 mm |
Part number aliases | BFP181 BFP181E7764HTSA1 SP000011013 |
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