BFP 450 H6327
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Specification
Product Category | 射频(RF)双极晶体管 |
Manufacturer | Infineon |
RoHS | yes |
Transistor type | Bipolar |
Technology | Si |
Transistor polarity | NPN |
DC collector / Base Gain hfe Min | 60 |
Collector - Emitter maximum voltage VCEO | 15 V |
Emitter-base voltage VEBO | 1.5 V |
Continuous collector current | 10 mA |
The maximum working temperature | + 150 C |
Configuration | Single |
Installation style | SMD/SMT |
Package / case | SOT-343 |
Trademark | Infineon Technologies |
Maximum DC collector current | 100 mA |
Minimum working temperature | - 65 C |
working frequency | 24 GHz |
Pd - Power Dissipation | 450 mW |
Series | BFP450 |
Factory packing quantity | 3000 |
Types | RF Bipolar Small Signal |
Part number aliases | BFP450 BFP450H6327XTSA1 SP000745270 |
Unit weight | 6 mg |
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