BFP 640ESD H6327
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Specification
Product Category | 射频(RF)双极晶体管 |
Manufacturer | Infineon |
RoHS | yes |
Transistor type | Bipolar |
Technology | SiGe |
Transistor polarity | NPN |
DC collector / Base Gain hfe Min | 110 |
Collector - Emitter maximum voltage VCEO | 4.1 V |
Continuous collector current | 50 mA |
Configuration | Single Dual Emitter |
Installation style | SMD/SMT |
Package / case | SOT-343 |
Trademark | Infineon Technologies |
working frequency | 45 GHz |
Pd - Power Dissipation | 200 mW |
Series | BFP640 |
Factory packing quantity | 3000 |
Types | RF Silicon Germanium |
Part number aliases | BFP640 BFP640ESDH6327XTSA1 SP000785482 |
Others include "BFP 640ESD H6327" parts
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