BFP 640FESD H6327
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Specification
Product Category | 射频(RF)双极晶体管 |
Manufacturer | Infineon |
RoHS | yes |
Transistor type | Bipolar |
Technology | SiGe |
Emitter-base voltage VEBO | 4.8 V |
Continuous collector current | 50 mA |
Installation style | SMD/SMT |
Package / case | TSFP-4-1 |
Trademark | Infineon Technologies |
Pd - Power Dissipation | 200 mW |
Series | BFP640 |
Factory packing quantity | 3000 |
Types | RF Silicon Germanium |
Part number aliases | BFP640 BFP640FESDH6327XTSA1 SP000890034 |
Unit weight | 8 mg |
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