BFP 720ESD H6327
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Specification
Product Category | 射频(RF)双极晶体管 |
Manufacturer | Infineon |
RoHS | yes |
Transistor type | Bipolar |
Technology | SiGe |
Transistor polarity | NPN |
DC collector / Base Gain hfe Min | 160 |
Collector - Emitter maximum voltage VCEO | 4.2 V |
Continuous collector current | 30 mA |
Configuration | Single Dual Emitter |
Installation style | SMD/SMT |
Package / case | SOT-343 |
Trademark | Infineon Technologies |
working frequency | 43 GHz |
Pd - Power Dissipation | 100 mW |
Series | BFP720 |
Factory packing quantity | 3000 |
Types | RF Silicon Germanium |
Part number aliases | BFP720 BFP720ESDH6327XTSA1 SP000785484 |
Others include "BFP 720ESD H6327" parts
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