BFP 740ESD H6327
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Specification
Product Category | 射频(RF)双极晶体管 |
Manufacturer | Infineon |
RoHS | yes |
Transistor type | Bipolar |
Technology | SiGe |
Collector - Emitter maximum voltage VCEO | 4.2 V |
Continuous collector current | 45 mA |
The maximum working temperature | + 150 C |
Installation style | SMD/SMT |
Package / case | SOT343-3 |
Trademark | Infineon Technologies |
DC current gain hFE maximum | 400 |
working frequency | 45 GHz |
Pd - Power Dissipation | 160 mW |
Series | BFP740 |
Types | RF Silicon Germanium |
Part number aliases | BFP740 BFP740ESDH6327XTSA1 SP000785486 |
Unit weight | 6 mg |
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