BFP 740FESD H6327
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Specification
Product Category | 射频(RF)双极晶体管 |
Manufacturer | Infineon |
RoHS | yes |
Transistor type | Bipolar |
Technology | SiGe |
Transistor polarity | NPN |
DC collector / Base Gain hfe Min | 160 |
Collector - Emitter maximum voltage VCEO | 4.2 V |
Continuous collector current | 45 mA |
Configuration | Single Dual Emitter |
Installation style | SMD/SMT |
Package / case | TSFP-4 |
Trademark | Infineon Technologies |
working frequency | 47 GHz |
Pd - Power Dissipation | 160 mW |
Series | BFP740 |
Factory packing quantity | 3000 |
Types | RF Silicon Germanium |
Part number aliases | BFP740 BFP740FESDH6327XTSA1 SP000890036 |
Others include "BFP 740FESD H6327" parts
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