BFP196WNH6327XTSA1
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Specification
Product Category | 射频(RF)双极晶体管 |
Manufacturer | Infineon |
RoHS | yes |
Transistor type | Bipolar Wideband |
Technology | Si |
Transistor polarity | NPN |
DC collector / Base Gain hfe Min | 70 |
Collector - Emitter maximum voltage VCEO | 12 V |
Emitter-base voltage VEBO | 2 V |
Continuous collector current | 150 mA |
The maximum working temperature | + 150 C |
Configuration | Single |
Installation style | SMD/SMT |
Package / case | SOT-343-4 |
Trademark | Infineon Technologies |
Maximum DC collector current | 150 mA |
Minimum working temperature | - 55 C |
working frequency | 7.5 GHz |
Output Power | - |
Pd - Power Dissipation | 700 mW |
Factory packing quantity | 3000 |
Part number aliases | 196 BFP BFP196 H6327 SP001643166 WN |
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BFP196WNH6327XTSA1
Infineon
RF 晶体管 NPN 12V 150mA 7.5GHz 700mW 表面贴装型 PG-SOT343-4
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