BFP840ESDH6327XTSA1
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Specification
Product Category | 射频(RF)双极晶体管 |
Manufacturer | Infineon |
RoHS | yes |
Transistor type | Bipolar |
Technology | SiGe |
Collector - Emitter maximum voltage VCEO | 2.25 V |
Emitter-base voltage VEBO | 2.9 V |
Continuous collector current | 35 mA |
The maximum working temperature | + 150 C |
Configuration | Single |
Installation style | SMD/SMT |
Package / case | SOT-343-4 |
Trademark | Infineon Technologies |
Minimum working temperature | - 55 C |
working frequency | 80 GHz |
Pd - Power Dissipation | 75 mW |
Series | BFP840 |
Factory packing quantity | 3000 |
Types | RF Silicon Germanium |
Part number aliases | 840ESD BFP BFP840 H6327 SP000943010 |
Unit weight | 6.400 mg |
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