BFP840FESDH6327XTSA1
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Specification
Product Category | 射频(RF)双极晶体管 |
Manufacturer | Infineon |
RoHS | yes |
Transistor type | Bipolar |
Technology | SiGe |
Collector - Emitter maximum voltage VCEO | 2.25 V |
Emitter-base voltage VEBO | 2.6 V |
Continuous collector current | 35 mA |
The maximum working temperature | + 150 C |
Configuration | Dual |
Installation style | SMD/SMT |
Package / case | TSFP-4 |
Trademark | Infineon Technologies |
working frequency | 85 GHz |
Pd - Power Dissipation | 75 mW |
Series | BFP840 |
Factory packing quantity | 3000 |
Types | RF Silicon Germanium |
Part number aliases | 840FESD BFP BFP840 H6327 SP000977846 |
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