BFP842ESDH6327XTSA1
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Specification
Product Category | 射频(RF)双极晶体管 |
Manufacturer | Infineon |
RoHS | yes |
Transistor type | Bipolar |
Technology | SiGe |
Collector - Emitter maximum voltage VCEO | 3.25 V |
Emitter-base voltage VEBO | 4.1 V |
Continuous collector current | 40 mA |
The maximum working temperature | + 150 C |
Installation style | SMD/SMT |
Package / case | SOT-343-4 |
Trademark | Infineon Technologies |
DC current gain hFE maximum | 450 |
Minimum working temperature | - 55 C |
working frequency | 60 GHz |
Pd - Power Dissipation | 120 mW |
Series | BFP842 |
Factory packing quantity | 3000 |
Types | RF Silicon Germanium |
Part number aliases | 842ESD BFP BFP842 H6327 SP000943012 |
Others include "BFP842ESDH6327XTSA1" parts
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