BFQ19SH6327XTSA1
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Specification
RoHS | yes |
Installation style | SMD/SMT |
Package / case | SOT-89-4 |
Transistor polarity | NPN |
Configuration | Single |
Collector - Emitter maximum voltage VCEO | 15 V |
Collector-base voltage VCBO | 20 V |
Emitter-base voltage VEBO | 3 V |
Gain Bandwidth Product fT | 5.5 GHz |
The maximum working temperature | + 150 C |
Continuous collector current | 120 mA |
DC collector / Base Gain hfe Min | 70 |
DC current gain hFE maximum | 140 |
Height | 1.5 mm |
Length | 4.5 mm |
Minimum working temperature | - 65 C |
Pd - Power Dissipation | 1 W |
Factory packing quantity | 1000 |
Width | 2.5 mm |
Unit weight | 130.500 mg |
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