BFR 181W H6327
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Specification
Product Category | 射频(RF)双极晶体管 |
Manufacturer | Infineon |
RoHS | yes |
Transistor type | Bipolar |
Technology | Si |
Transistor polarity | NPN |
DC collector / Base Gain hfe Min | 70 |
Collector - Emitter maximum voltage VCEO | 12 V |
Emitter-base voltage VEBO | 2 V |
Continuous collector current | 20 mA |
Configuration | Single |
Installation style | SMD/SMT |
Package / case | SOT-323 |
Trademark | Infineon Technologies |
working frequency | 8 GHz |
Pd - Power Dissipation | 175 mW |
Series | BFR181 |
Factory packing quantity | 3000 |
Types | RF Bipolar Small Signal |
Part number aliases | BFR181 BFR181WH6327XTSA1 SP000750418 |
Unit weight | 60 mg |
Others include "BFR 181W H6327" parts
The following parts include 'BFR 181W H6327'
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BFR 181W H6327 Releted Information
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