BFR 182W H6327
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Specification
Product Category | 射频(RF)双极晶体管 |
Manufacturer | Infineon |
RoHS | yes |
Transistor type | Bipolar |
Technology | Si |
Transistor polarity | NPN |
DC collector / Base Gain hfe Min | 70 |
Collector - Emitter maximum voltage VCEO | 12 V |
Emitter-base voltage VEBO | 2 V |
Continuous collector current | 35 mA |
The maximum working temperature | + 150 C |
Configuration | Single |
Installation style | SMD/SMT |
Package / case | SOT-323 |
Trademark | Infineon Technologies |
Minimum working temperature | - 55 C |
working frequency | 8 GHz |
Pd - Power Dissipation | 250 mW |
Series | BFR182 |
Factory packing quantity | 3000 |
Types | RF Bipolar Small Signal |
Part number aliases | BFR182 BFR182WH6327XTSA1 SP000750420 |
Unit weight | 60 mg |
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BFR182WH6327XTSA1
Infineon
RF 晶体管 NPN 12V 35mA 8GHz 250mW 表面贴装型 PG-SOT323-3
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