BFR 193 E6327
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Specification
Product Category | 射频(RF)双极晶体管 |
Manufacturer | Infineon |
RoHS | yes |
Transistor type | Bipolar |
Technology | Si |
Transistor polarity | NPN |
DC collector / Base Gain hfe Min | 70 |
Collector - Emitter maximum voltage VCEO | 12 V |
Emitter-base voltage VEBO | 2 V |
Continuous collector current | 0.08 A |
The maximum working temperature | + 150 C |
Configuration | Single |
Installation style | SMD/SMT |
Package / case | SOT-23 |
Trademark | Infineon Technologies |
Collector-base voltage VCBO | 20 V |
DC current gain hFE maximum | 70 at 30 mA at 8 V |
Height | 1 mm |
Length | 2.9 mm |
Maximum DC collector current | 0.08 A |
Minimum working temperature | - 65 C |
working frequency | 8000 MHz |
Pd - Power Dissipation | 580 mW |
Series | BFR193 |
Factory packing quantity | 3000 |
Types | RF Bipolar Small Signal |
Width | 1.3 mm |
Part number aliases | BFR193 BFR193E6327HTSA1 SP000011056 |
Unit weight | 8 mg |
Others include "BFR 193 E6327" parts
The following parts include 'BFR 193 E6327'
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