BFR 193W H6327
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Specification
Product Category | 射频(RF)双极晶体管 |
Manufacturer | Infineon |
RoHS | yes |
Transistor type | Bipolar |
Technology | Si |
Transistor polarity | NPN |
DC collector / Base Gain hfe Min | 70 |
Collector - Emitter maximum voltage VCEO | 12 V |
Emitter-base voltage VEBO | 2 V |
Continuous collector current | 80 mA |
Installation style | SMD/SMT |
Package / case | SOT-323 |
Trademark | Infineon Technologies |
Maximum DC collector current | 80 mA |
working frequency | 900 MHz |
Pd - Power Dissipation | 580 mW |
Series | BFR193 |
Factory packing quantity | 3000 |
Types | RF Bipolar Small Signal |
Part number aliases | BFR193 BFR193WH6327XTSA1 SP000734404 |
Unit weight | 60 mg |
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