BFR 360F H6327
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Specification
Product Category | 射频(RF)双极晶体管 |
Manufacturer | Infineon |
RoHS | yes |
Transistor type | Bipolar |
Technology | Si |
Transistor polarity | NPN |
Collector - Emitter maximum voltage VCEO | 6 V |
Emitter-base voltage VEBO | 2 V |
Continuous collector current | 35 mA |
The maximum working temperature | + 150 C |
Configuration | Single |
Installation style | SMD/SMT |
Package / case | TSFP-3 |
Trademark | Infineon Technologies |
DC current gain hFE maximum | 160 |
Gain Bandwidth Product fT | 14 GHz |
Minimum working temperature | - 55 C |
working frequency | 3.5 GHz |
Pd - Power Dissipation | 210 mW |
Series | BFR360 |
Factory packing quantity | 3000 |
Types | RF Bipolar Small Signal |
Part number aliases | BFR360 BFR360FH6327XTSA1 SP000750428 |
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BFR 360F H6327 Releted Information
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