BFR840L3RHESDE6327XTSA1
In stock
- BFR840L3RHESDE6327XTSA1 Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
Product Category | 射频(RF)双极晶体管 |
Manufacturer | Infineon |
RoHS | yes |
Transistor type | Bipolar |
Technology | SiGe |
Collector - Emitter maximum voltage VCEO | 2.25 V |
Emitter-base voltage VEBO | 2.9 V |
Continuous collector current | 35 mA |
The maximum working temperature | + 150 C |
Configuration | Single |
Installation style | SMD/SMT |
Package / case | TSLP-3 |
Trademark | Infineon Technologies |
Minimum working temperature | - 55 C |
working frequency | 75 GHz |
Pd - Power Dissipation | 75 mW |
Series | BFR840L3 |
Types | RF Silicon Germanium |
Part number aliases | 840L3RHESD BFR BFR840L3RHESDE6327XT E6327 SP000978848 |
Others include "BFR840L3RHESDE6327XTSA1" parts
The following parts include 'BFR840L3RHESDE6327XTSA1'
BFR840L3RHESDE6327XTSA1 Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
BFR840L3RHESDE6327XTSA1
Infineon
RF Transistor NPN 2.6V 35mA 75GHz 75mW Surface Mount PG-TSLP-3
Learn More >
-
- View All Newest Products from Omron