BSB044N08NN3GXUMA1
In stock
- BSB044N08NN3GXUMA1 Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | WDSON-2-3 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 80 V |
Id - continuous drain current | 90 A |
Rds On - Drain-Source On-Resistance | 3.7 mOhms |
Vgs th - gate-source threshold voltage | 2 V |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 73 nC |
Minimum working temperature | - 40 C |
The maximum working temperature | + 150 C |
Configuration | Single |
Channel mode | Enhancement |
Fall time | 7 ns |
Forward transconductance - minimum | 36 S |
Height | 0.7 mm |
Length | 6.35 mm |
Pd - Power Dissipation | 78 W |
Rise Time | 9 ns |
Series | OptiMOS 3 |
Factory packing quantity | 5000 |
Transistor type | 1 N-Channel |
Typical shutdown delay time | 26 ns |
Typical turn-on delay time | 14 ns |
Width | 5.05 mm |
Others include "BSB044N08NN3GXUMA1" parts
The following parts include 'BSB044N08NN3GXUMA1'
BSB044N08NN3GXUMA1 Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
BSB044N08NN3GXUMA1
Infineon
Trans MOSFET N-CH Si 80V 18A 7-Pin WDSON T/R
Learn More >
-
-
-
BSB044N08NN3GXUMA1
Infineon
N-Channel 80V 18A (Ta), 90A (Tc) 2.2W (Ta), 78W (Tc) Surface Mount MG-WDSON-2, CanPAK M™
Learn More >
-
-
-
BSB044N08NN3GXUMA1
Infineon
Trans MOSFET N-CH Si 80V 18A 7-Pin WDSON T/R
Learn More >
-
- View All Newest Products from Omron