BSB165N15NZ3GXUMA1
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | WDSON-2-3 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 150 V |
Id - continuous drain current | 45 A |
Rds On - Drain-Source On-Resistance | 13.1 mOhms |
Vgs th - gate-source threshold voltage | 2 V |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 35 nC |
Minimum working temperature | - 40 C |
The maximum working temperature | + 150 C |
Configuration | Single |
Channel mode | Enhancement |
Fall time | 7 ns |
Forward transconductance - minimum | 24 S |
Height | 0.7 mm |
Length | 6.35 mm |
Pd - Power Dissipation | 78 W |
Rise Time | 10 ns |
Series | OptiMOS 3 |
Factory packing quantity | 5000 |
Transistor type | 1 N-Channel |
Typical shutdown delay time | 17 ns |
Typical turn-on delay time | 10 ns |
Width | 5.05 mm |
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