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BSB165N15NZ3GXUMA1
Manufacturer:
Mfr. Part #:
BSB165N15NZ3GXUMA1
Allchips #:
R001-BSB165N15NZ3GXUMA1-1-H-0000-X-Y
Description:
表面贴装型 N 通道 150V 9A（Ta），45A（Tc） 2.8W（Ta），78W（Tc）
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Specification
| RoHS | yes |
| Technology | Si |
| Installation style | SMD/SMT |
| Package / case | WDSON-2-3 |
| Number of channels | 1 Channel |
| Transistor polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 150 V |
| Id - continuous drain current | 45 A |
| Rds On - Drain-Source On-Resistance | 13.1 mOhms |
| Vgs th - gate-source threshold voltage | 2 V |
| Vgs - gate-source voltage | 20 V |
| Qg - gate charge | 35 nC |
| Minimum working temperature | - 40 C |
| The maximum working temperature | + 150 C |
| Configuration | Single |
| Channel mode | Enhancement |
| Fall time | 7 ns |
| Forward transconductance - minimum | 24 S |
| Height | 0.7 mm |
| Length | 6.35 mm |
| Pd - Power Dissipation | 78 W |
| Rise Time | 10 ns |
| Series | OptiMOS 3 |
| Factory packing quantity | 5000 |
| Transistor type | 1 N-Channel |
| Typical shutdown delay time | 17 ns |
| Typical turn-on delay time | 10 ns |
| Width | 5.05 mm |
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