BSC010N04LS6ATMA1
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Specification
晶体管极性 | MOSFET |
Rds On-漏源导通电阻 | 1 mOhms |
电路数量 | 1 Channel |
Qg-栅极电荷 | 67 nC |
Id-连续漏极电流 | 100 A |
Vds-漏源极击穿电压 | 40 V |
Pd-功率耗散 | 150 W |
安装方式 | SMD/SMT |
封装 | TDSON-8 |
工作温度范围 | - 55 C~+ 175 C |
Vgs - 栅极-源极电压 | 20 V |
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BSC010N04LS6ATMA1
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表面贴装型 N 通道 40V 40A(Ta),100A(Tc) 3W(Ta),150W(Tc) PG-TDSON-8-6
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