BSC014N06NS
In stock
- BSC014N06NS Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | TDSON-8 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 60 V |
Id - continuous drain current | 100 A |
Rds On - Drain-Source On-Resistance | 1.2 mOhms |
Vgs th - gate-source threshold voltage | 2.1 V |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 104 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Configuration | Single |
Qualifications | AEC-Q100 |
Channel mode | Enhancement |
Fall time | 11 ns |
Forward transconductance - minimum | 75 S |
Height | 1.27 mm |
Length | 5.9 mm |
Pd - Power Dissipation | 156 W |
Rise Time | 10 ns |
Series | OptiMOS 5 |
Factory packing quantity | 5000 |
Transistor type | 1 N-Channel |
Typical shutdown delay time | 43 ns |
Typical turn-on delay time | 23 ns |
Width | 5.15 mm |
Unit weight | 100 mg |
Others include "BSC014N06NS" parts
The following parts include 'BSC014N06NS'
BSC014N06NS Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
BSC014N06NS
Infineon
N沟道
Learn More >
-
-
-
BSC014N06NS
Infineon
N沟道
Learn More >
-
-
-
BSC014N06NS
Infineon
N沟道
Learn More >
-
-
-
BSC014N06NS
Infineon
N沟道
Learn More >
-
-
-
BSC014N06NS
Infineon
N沟道
Learn More >
-
-
-
BSC014N06NST
Infineon
Learn More >
-
-
-
BSC014N06NST
Infineon
Learn More >
-
-
-
BSC014N06NST
Infineon
Learn More >
-
-
-
BSC014N06NSATMA1
Infineon
Trans MOSFET N-CH 60V 31A 8-Pin TDSON EP T/R
Learn More >
-
-
-
BSC014N06NSATMA1
Infineon
表面贴装型 N 通道 60V 30A(Ta),100A(Tc) 2.5W(Ta),156W(Tc) PG-TDSON-8-17
Learn More >
-
- View All Newest Products from Omron