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BSC016N03LSGATMA1
Manufacturer:
Mfr. Part #:
BSC016N03LSGATMA1
Allchips #:
R001-BSC016N03LSGATMA1-1-H-2201-X-N
Description:
Trans MOSFET N-CH 30V 32A 8-Pin TDSON EP T/R
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Specification
| RoHS | yes |
| Technology | Si |
| Installation style | SMD/SMT |
| Package / case | TDSON-8 |
| Number of channels | 1 Channel |
| Transistor polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Id - continuous drain current | 100 A |
| Rds On - Drain-Source On-Resistance | 1.3 mOhms |
| Vgs th - gate-source threshold voltage | 1 V |
| Vgs - gate-source voltage | 20 V |
| Qg - gate charge | 131 nC |
| Minimum working temperature | - 55 C |
| The maximum working temperature | + 150 C |
| Configuration | Single |
| Channel mode | Enhancement |
| Fall time | 8.6 ns |
| Forward transconductance - minimum | 65 S |
| Height | 1.27 mm |
| Length | 5.9 mm |
| Pd - Power Dissipation | 125 W |
| Rise Time | 8.6 ns |
| Series | OptiMOS 3 |
| Factory packing quantity | 5000 |
| Transistor type | 1 N-Channel |
| Typical shutdown delay time | 51 ns |
| Typical turn-on delay time | 13 ns |
| Width | 5.15 mm |
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