BSC026N04LSATMA1
In stock
- BSC026N04LSATMA1 Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | TDSON-8 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 40 V |
Id - continuous drain current | 100 A |
Rds On - Drain-Source On-Resistance | 2.1 mOhms |
Vgs th - gate-source threshold voltage | 1.2 V |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 45 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Configuration | Single |
Qualifications | AEC-Q100 |
Channel mode | Enhancement |
Fall time | 4 ns |
Forward transconductance - minimum | 85 S |
Height | 1.27 mm |
Length | 5.9 mm |
Pd - Power Dissipation | 63 W |
Rise Time | 4 ns |
Series | OptiMOS 5 |
Factory packing quantity | 5000 |
Transistor type | 1 N-Channel |
Typical shutdown delay time | 37 ns |
Typical turn-on delay time | 5 ns |
Width | 5.15 mm |
BSC026N04LSATMA1 Documents
Download datasheets and manufacturer documentation for BSC026N04LSATMA1
Datasheets
Others include "BSC026N04LSATMA1" parts
The following parts include 'BSC026N04LSATMA1'
BSC026N04LSATMA1 Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
BSC026N04LSATMA1
Infineon
N沟道,40V,100A,2.6mΩ@10V
Learn More >
-
-
-
BSC026N04LSATMA1
Infineon
N沟道,40V,100A,2.6mΩ@10V
Learn More >
-
-
-
BSC026N04LSATMA1
Infineon
Trans MOSFET N-CH 40V 23A 8-Pin TDSON T/R
Learn More >
-
- View All Newest Products from Omron