BSC027N04LS G
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Specification
Vds-漏源极击穿电压 | 40V |
晶体管极性 | N沟道 |
Rds On-漏源导通电阻 | 2.7mΩ @ 50A,10V |
Pd-功率耗散 | 2.5W |
Vgs - 栅极-源极电压 | 2V @ 49uA |
封装 | PG-TDSON-8 |
Id-连续漏极电流 | 24A,100A(Tc) |
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