BSC027N04LSGATMA1
In stock
- BSC027N04LSGATMA1 Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
封装 | PowerTDFN-8 |
Pd-功率耗散 | 83 W |
电路数量 | 1 Channel |
Qg-栅极电荷 | 64 nC |
高度 | 1.27 mm |
长度 | 5.9 mm |
宽度 | 5.15 mm |
工作温度范围 | - 55 C~+ 150 C |
Id-连续漏极电流 | 100 A |
Vds-漏源极击穿电压 | 40 V |
晶体管极性 | MOSFET |
Rds On-漏源导通电阻 | 2.7 mOhms |
Vgs - 栅极-源极电压 | 10 V |
安装方式 | SMD/SMT |
Others include "BSC027N04LSGATMA1" parts
The following parts include 'BSC027N04LSGATMA1'
BSC027N04LSGATMA1 Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
BSC027N04LSGATMA1
Infineon
N沟道,40V,100A,2.7mΩ@10V
Learn More >
-
-
-
BSC027N04LSGATMA1
Infineon
N沟道,40V,100A,2.7mΩ@10V
Learn More >
-
- View All Newest Products from Omron