BSC027N06LS5ATMA1
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Specification
Installation style | SMD/SMT |
Package / case | TDSON-8 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 60 V |
Id - continuous drain current | 100 A |
Rds On - Drain-Source On-Resistance | 2.3 mOhms |
Vgs th - gate-source threshold voltage | 1.1 V |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 30 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Configuration | 1 N-Channel |
Channel mode | Enhancement |
Fall time | 5.4 ns |
Forward transconductance - minimum | 60 S |
Pd - Power Dissipation | 83 W |
Rise Time | 4.8 ns |
Series | OptiMOS 5 |
Factory packing quantity | 5000 |
Transistor type | 1 N-Channel |
Typical shutdown delay time | 25 ns |
Typical turn-on delay time | 7.7 ns |
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表面贴装型 N 通道 60V 100A(Tc) 83W(Tc) PG-TDSON-8-7
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表面贴装型 N 通道 60V 100A(Tc) 83W(Tc) PG-TDSON-8-7
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