BSC032NE2LSATMA1
In stock
- BSC032NE2LSATMA1 Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | TDSON-8 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 25 V |
Id - continuous drain current | 84 A |
Rds On - Drain-Source On-Resistance | 2.7 mOhms |
Vgs th - gate-source threshold voltage | 1.2 V |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 21 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Configuration | Single |
Qualifications | AEC-Q100 |
Channel mode | Enhancement |
Fall time | 2.2 ns |
Forward transconductance - minimum | 46 S |
Height | 1.27 mm |
Length | 5.9 mm |
Pd - Power Dissipation | 37 W |
Rise Time | 2.8 ns |
Factory packing quantity | 5000 |
Transistor type | 1 N-Channel |
Typical shutdown delay time | 15 ns |
Typical turn-on delay time | 3.3 ns |
Width | 5.15 mm |
BSC032NE2LSATMA1 Documents
Download datasheets and manufacturer documentation for BSC032NE2LSATMA1
Datasheets
Others include "BSC032NE2LSATMA1" parts
The following parts include 'BSC032NE2LSATMA1'
BSC032NE2LSATMA1 Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
BSC032NE2LSATMA1
Infineon
表面贴装型 N 通道 25V 22A(Ta),84A(Tc) 2.8W(Ta),78W(Tc) PG-TDSON-8-6
Learn More >
-
-
-
BSC032NE2LSATMA1
Infineon
Trans MOSFET N-CH 25V 22A 8-Pin TDSON EP T/R
Learn More >
-
-
-
BSC032NE2LSATMA1
Infineon
Trans MOSFET N-CH 25V 22A 8-Pin TDSON EP T/R
Learn More >
-
- View All Newest Products from Omron