BSC034N06NS
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Specification
封装 | DFN-8(5.1x5.9) |
电路数量 | 1 Channel |
晶体管极性 | MOSFET |
Vds-漏源极击穿电压 | 60 V |
高度 | 1.27 mm |
Pd-功率耗散 | 74 W |
Id-连续漏极电流 | 100 A |
Rds On-漏源导通电阻 | 3.4 mOhms |
Qg-栅极电荷 | 33 nC |
工作温度范围 | - 55 C~+ 150 C |
安装方式 | SMD/SMT |
长度 | 5.9 mm |
Vgs - 栅极-源极电压 | 10 V |
宽度 | 5.15 mm |
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