BSC040N08NS5ATMA1
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Specification
封装 | PowerTDFN-8 |
Vds-漏源极击穿电压 | 80V |
Id-连续漏极电流 | 100A(Tc) |
工作温度范围 | -55°C~150°C(TJ) |
Pd-功率耗散 | 104W(Tc) |
晶体管极性 | 分立半导体产品,晶体管-FET,MOSFET-单个 |
安装方式 | 表面贴装型 |
Vgs - 栅极-源极电压 | 3.8V@67uA |
Rds On-漏源导通电阻 | 4mΩ@50A,10V |
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