BSC047N08NS3G
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Specification
Vds-漏源极击穿电压 | 80V |
Vgs - 栅极-源极电压 | 3.5V@90uA |
晶体管极性 | N沟道 |
封装 | PG-TDSON-8 |
Rds On-漏源导通电阻 | 4.7mΩ@50A,10V |
Id-连续漏极电流 | 18A |
Pd-功率耗散 | 2.5W |
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FEATURED PRODUCT SOMRON
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BSC047N08NS3 G
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G BSC047N08NS3
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BSC047N08NS3G
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BSC047N08NS3G
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BSC047N08NS3G
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BSC047N08NS3G
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BSC047N08NS3G
Infineon
Trans MOSFET N-CH 80V 18A 8-Pin TDSON EP T/R
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BSC047N08NS3GATMA1
Infineon
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BSC047N08NS3GATMA1
Infineon
表面贴装型 N 通道 80V 18A(Ta),100A(Tc) 2.5W(Ta),125W(Tc) PG-TDSON-8-1
Learn More >
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BSC047N08NS3GATMA1
Infineon
Trans MOSFET N-CH 80V 18A 8-Pin TDSON EP T/R
Learn More >
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BSC047N08NS3GATMA1
Infineon
Trans MOSFET N-CH 80V 18A 8-Pin TDSON EP T/R
Learn More >
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-
BSC047N08NS3GATMA1
Infineon
表面贴装型 N 通道 80V 18A(Ta),100A(Tc) 2.5W(Ta),125W(Tc) PG-TDSON-8-1
Learn More >
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-
BSC047N08NS3GATMA1
Infineon
Trans MOSFET N-CH 80V 18A 8-Pin TDSON EP T/R
Learn More >
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