BSC054N04NSGATMA1
In stock
- BSC054N04NSGATMA1 Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | TDSON-8 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 40 V |
Id - continuous drain current | 81 A |
Rds On - Drain-Source On-Resistance | 4.5 mOhms |
Vgs th - gate-source threshold voltage | 2 V |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 34 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Configuration | Single |
Channel mode | Enhancement |
Fall time | 3.6 ns |
Forward transconductance - minimum | 34 S |
Height | 1.27 mm |
Length | 5.9 mm |
Pd - Power Dissipation | 57 W |
Rise Time | 2.6 ns |
Series | OptiMOS 3 |
Factory packing quantity | 5000 |
Transistor type | 1 N-Channel |
Typical shutdown delay time | 16 ns |
Typical turn-on delay time | 11 ns |
Width | 5.15 mm |
Others include "BSC054N04NSGATMA1" parts
The following parts include 'BSC054N04NSGATMA1'
BSC054N04NSGATMA1 Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
BSC054N04NSGATMA1
Infineon
Trans MOSFET N-CH 40V 17A 8-Pin TDSON EP T/R
Learn More >
-
-
-
BSC054N04NSGATMA1
Infineon
Trans MOSFET N-CH 40V 17A 8-Pin TDSON EP T/R
Learn More >
-
-
-
BSC054N04NSGATMA1
Infineon
N沟道,40V,17A,5.4mΩ@10V
Learn More >
-
- View All Newest Products from Omron