BSC070N10NS3GATMA1
In stock
- BSC070N10NS3GATMA1 Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | TDSON-8 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 100 V |
Id - continuous drain current | 90 A |
Rds On - Drain-Source On-Resistance | 6.3 mOhms |
Vgs th - gate-source threshold voltage | 2 V |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 55 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Configuration | Single |
Channel mode | Enhancement |
Fall time | 8 ns |
Forward transconductance - minimum | 36 S |
Height | 1.27 mm |
Length | 5.9 mm |
Pd - Power Dissipation | 114 W |
Rise Time | 10 ns |
Series | OptiMOS 3 |
Factory packing quantity | 5000 |
Transistor type | 1 N-Channel |
Typical shutdown delay time | 29 ns |
Typical turn-on delay time | 15 ns |
Width | 5.15 mm |
Unit weight | 300 mg |
BSC070N10NS3GATMA1 Documents
Download datasheets and manufacturer documentation for BSC070N10NS3GATMA1
Datasheets
Others include "BSC070N10NS3GATMA1" parts
The following parts include 'BSC070N10NS3GATMA1'
BSC070N10NS3GATMA1 Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
BSC070N10NS3GATMA1
Infineon
MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 3
Learn More >
-
-
-
BSC070N10NS3GATMA1
Infineon
Trans MOSFET N-CH 100V 92A 8-Pin TDSON EP T/R
Learn More >
-
-
-
BSC070N10NS3GATMA1
Infineon
Trans MOSFET N-CH 100V 92A 8-Pin TDSON EP T/R
Learn More >
-
-
-
BSC070N10NS3GATMA1
Infineon
N沟道 100V 90A 7mΩ@10V
Learn More >
-
- View All Newest Products from Omron