BSC0802LSATMA1
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晶体管极性 | MOSFET |
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BSC0802LSATMA1
Analog Devices Inc
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BSC0802LSATMA1
Infineon
N沟道 Cissy:5000pF ID(@25°C):100A Pt:156W QG(typ @10V):61nC RDS(on)(@10V):3.4mΩ VGS(th):1.7V/1.1V/2.3V TDSON-8 -55℃~+150℃
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