BSC0901NSIATMA1
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Specification
封装 | PG-TDSON-8-6 |
晶体管极性 | 分立半导体产品,晶体管-FET,MOSFET-单个 |
Vds-漏源极击穿电压 | 30V |
工作温度范围 | -55°C~150°C(TJ) |
安装方式 | 表面贴装型 |
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BSC0901NSIATMA1
Infineon
表面贴装型 N 通道 30V 28A(Ta),100A(Tc) 2.5W(Ta),69W(Tc) PG-TDSON-8-6
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